HIT 2SK1835 Datasheet
Application
High speed power switching
Features
2SK1835
Silicon N-Channel MOS FET
• High breakdown voltage (V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator
= 1500V)
DSS
Outline and Equivalent Circuit
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK1835
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
1500 V
±20 V
4A
10 A
4A
125 W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.9 1.4 — S ID = 2 A
Input capacitance Ciss — 1700 — pF VDS = 10 V
Output capacitance Coss — 230 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
1500 — — V ID = 10 mA, VGS = 0
——±1µAVGS = ±20 V, VDS = 0
— — 500 µAVDS = 1200 V, VGS = 0
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
— 4.6 7.0 Ω ID = 2 A
V
= 15 V*
GS
V
= 20V*
DS
1
1
— 25 — ns ID = 2A
— 80 — ns VGS = 10 V
— 230 — ns RL = 15 Ω
—80—ns
— 0.85 — V IF = 4 A, VGS = 0
— 2500 — ns IF = 4 A, VGS = 0,
di
/ dt = 100 A / µs
F
2SK1835
3
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