HIT 2SK1764 Datasheet
2SK1764
Silicon N-Channel MOS FET
Application
Low frequency amplifier
High speed switching
Features
• Low on-resistance
• High speed switching
• 4 V Gate drive device can be driven from 5 V source
• Suitable for switchingregulator, DC-DC converter
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1764
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel power dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
3. Marking is "KY".
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff voltage V
Drain to source cutoff current I
Gate to source cutoff current I
Static drain to source on state
DSS
GSS
R
GS(off)
DS(on)1
resistance
Static drain to source on state
R
DS(on)2
resistance
Forward transfer admittance |yfs| 0.9 1.7 — S VDS = 10 V
Input capacitance Ciss — 140 — pF VDS = 10 V
Output capacitance Coss — 75 — pF VGS = 0
Reverse transfer capacitance Crss — 20 — pF f = 1 MHz
Turn on time t
Turn off time t
on
off
Note 1. Pulse Test
60 — — V ID = 10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
1—2VV
——10µAVDS = 50 V, VGS = 0
——±5µAVGS = ±15 V, VDS = 0
— 0.3 0.45 Ω VGS = 10 V
— 0.4 0.60 Ω VGS = 4 V
— 18 — ns VDS = 10 V, ID = 1 A*
— 80 — ns RL = 30 Ω
60 V
±20 V
2A
4A
4A
1W
= 10 V, ID = 1 mA
DS
= 1 A*
= 1 A*
= 1 A*
1
1
1
I
D
I
D
I
D
1
See characteristics curves of 2SK975
2
Loading...