HIT 2SK1697 Datasheet

2SK1697

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device - - - can be driven from 5 V source.

• Suitable for DC – DC converter, motor drive, power switch, solenoid drive

Outline

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SK1697

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)

3. Marking is “EY”.

60 V
±20 V

0.5 A

1.5 A

0.5 A
1W

2