HIT 2SK1671 Datasheet
2SK1671
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC – DC converter and motor drive
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK1671
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|1220—S I
Input capacitance Ciss — 3000 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1250 — pF f = 1 MHz
Reverse transfer capacitance Crss — 170 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse test
250 — — V ID = 10 mA, VGS = 0
±30——V I
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 200 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.075 0.095 Ω ID = 15 A, VGS = 10 V *
— 45 — ns ID = 15 A, VGS = 10 V,
— 170 — ns RL = 2 Ω
— 250 — ns
— 130 — ns
— 1.0 — V IF = 30 A, VGS = 0
— 400 — ns IF = 30 A, VGS = 0,
250 V
±30 V
30 A
120 A
30 A
125 W
= ±100 µA, VDS = 0
G
= 15 A, VDS = 10 V *
D
di
/dt = 100 A/µs
F
1
1
2
2SK1671
150
Power vs. Temperature Derating
100
50
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
50
40
10 V
8 V
6 V
Pulse Test
5 V
(A)
D
30
1,000
Maximum Safe Operation Area
300
100
(A)
Operation in this area
D
30
is limited by R
DS (on)
PW = 10 ms (1 Shot)
DC Operation (T
10
3
Drain Current I
1
0.3
Ta = 25°C
0.1
1 3 30 300
10 100 1,000
Drain to Source Voltage V
Typical Transfer Characteristics
50
40
V
= 10 V
30
DS
Pulse Test
(A)
D
100 µs
1 ms
C
= 25°C)
10 µs
DS
(V)
20
Drain Current I
10
0
Drain to Source Voltage V
4.5 V
V
= 4 V
GS
41216
820
(V)
DS
20
Drain Current I
10
TC = 75°C
0
Gate to Source Voltage V
25°C
–25°C
268
4
GS
10
(V)
3
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