HIT 2SK1667 Datasheet
2SK1667
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC – DC converter
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1667
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 4 A, VDS = 10 V *
Input capacitance Ciss — 690 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 265 — pF f = 1 MHz
Reverse transfer capacitance Crss — 45 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse test
250 — — V ID = 10 mA, VGS = 0
±30——V I
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 200 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.4 0.55 Ω ID = 4 A, VGS = 10 V *
— 13 — ns ID = 4 A, VGS = 10 V,
— 55 — ns RL = 7.5 Ω
—65—ns
—37—ns
— 1.0 — V IF = 7 A, VGS = 0
— 180 — ns IF = 7 A, VGS = 0,
250 V
±30 V
7A
28 A
7A
50 W
= ±100 µA, VDS = 0
G
di
/dt = 100 A/µs
F
1
1
2
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
Operation in this area
is limited by R (on)
30
10
D
3
Drain Current I (A)
1
0.3
0.1
Ta = 25°C
1
310
Drain to Source Voltage V (V)
DS
10 s
100 s
µ
µ
1 ms
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
100
30
DS
2SK1667
1000
300
Typical Output Characteristics
10
10 V
6 V
8
6
D
4
Drain Current I (A)
2
0
148
Drain to Source Voltage V (V)
5.5 V
5 V
4.5 V
V = 4 V
GS
12 16
DS
Pulse Test
Typical Transfer Characteristics
10
V = 10 V
DS
8
Pulse Test
D
6
4
Drain Current I (A)
20
Tc = 75°C
2
02 6
Gate to Source Voltage V (V)
25°C
– 25°C
4
GS
8
10
3
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