HIT 2SK1666 Datasheet
2SK1666
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Low voltage drive device
Can be driven from 4 V
• Suitable for motor drive, solenoid drive , DC-DC converter and etc.
Outline
TO-3PFM
G
D
1
2
3
1. Gate
2. Drain
S
3. Source
2SK1666
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
60 V
±20 V
45 A
180 A
45 A
60 W
2
2SK1666
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
60——V I
voltage
Gate to source breakdown
V
(BR)GSS
±20——V I
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 0.016 0.02 Ω ID = 20 A, VGS = 10 V *
resistance
— 0.022 0.035 Ω ID = 20 A, VGS = 4 V *
Forward transfer admittance |yfs| 20 32 — S ID = 20 A, VDS = 10 V *
Input capacitance Ciss — 3950 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1920 — pF f = 1 MHz
Reverse transfer capacitance Crss — 360 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
— 30 — ns ID = 20 A, VGS = 10 V,
— 180 — ns RL = 1.5 Ω
— 630 — ns
— 290 — ns
— 1.3 — V IF = 45 A, VGS = 0
voltage
Body to drain diode reverse
t
rr
— 140 — ns IF = 45 A, VGS = 0,
recovery time
Note: 1. Pulse test
= 10 mA, VGS = 0
D
= ±100 µA, VDS = 0
G
di
/dt = 50 A/µs
F
1
1
1
3
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