HIT 2SK1620-S, 2SK1620-L Datasheet
2SK1620(L), 2SK1620(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1620(L), 2SK1620(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
150 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
10 A
Drain peak current I
D(pulse)
*
1
40 A
Body to drain diode reverse drain current I
DR
10 A
Channel dissipation Pch*
2
50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
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