HIT 2SK1618-S, 2SK1618-L Datasheet

2SK1618(L), 2SK1618(S)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

3

2

1

4

3

2

1

4

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

D

G

S

2SK1618(L), 2SK1618(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

600 V

Gate to source voltage V

GSS

±30 V

Drain current I

D

3A

Drain peak current I

D(pulse)

*

1

6A

Body to drain diode reverse drain current I

DR

3A

Channel dissipation Pch*

2

30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

C

= 25°C