HIT 2SK1573 Datasheet
2SK1573
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK1573
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
600 V
±30 V
15 A
60 A
15 A
125 W
2
2SK1573
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 9 14 — S ID = 8 A, VDS = 10 V *
Input capacitance Ciss — 3150 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 700 — pF f = 1 MHz
Reverse transfer capacitance Crss — 90 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse test
600 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.35 0.50 Ω ID = 8 A, VGS = 10 V *
— 35 — ns ID = 8 A, VGS = 10 V,
— 105 — ns RL = 3.75 Ω
— 250 — ns
—90—ns
— 1.0 — V IF = 15 A, VGS = 0
— 680 — ns IF = 15 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
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