HIT 2SK1572 Datasheet
2SK1572
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
G
D
S
1
2
3
1. Gate
2. Drain
3. Source
2SK1572
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
600 V
±30 V
3A
6A
3A
25 W
2
2SK1572
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 1.2 2.0 — S ID = 1 A, VDS = 10 V *
Input capacitance Ciss — 295 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 70 — pF f = 1 MHz
Reverse transfer capacitance Crss — 12 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse test
600 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 3.8 5.0 Ω ID = 1 A, VGS = 10 V *
—8 —nsI
= 1 A, VGS = 10 V,
D
— 25 — ns RL = 30 Ω
—65—ns
—30—ns
— 0.9 — V IF = 2 A, VGS = 0
— 220 — ns IF = 2 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
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