HIT 2SK1567, 2SK1566 Datasheet

2SK1566, 2SK1567

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-220FM

G

D

S

1

2

3

1. Gate

2. Drain

3. Source

2SK1566, 2SK1567

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1566 V

DSS

2SK1567 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V
7A
28 A
7A
35 W

2

2SK1566, 2SK1567

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1566 V

(BR)DSS

breakdown voltage 2SK1567 500
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage 2SK1566 I

GSS

DSS

drain current 2SK1567 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1566 R

GS(off)

DS(on)

on state resistance 2SK1567 — 0.7 0.9
Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A, VDS = 10 V *
Input capacitance Ciss — 1050 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 280 — pF f = 1 MHz
Reverse transfer capacitance Crss — 40 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse test

450 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.6 0.8 Ω ID = 4 A, VGS = 10 V *

— 15 — ns ID = 4 A, VGS = 10 V,
— 55 — ns RL = 7.5 Ω
—95—ns
—40—ns
— 0.95 — V IF = 7 A, VGS = 0

— 320 — ns IF = 7 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

See characteristic curves of 2SK1157, 2SK1158.

3

2SK1566, 2SK1567

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Maximum Safe Operation Area

50
20

(A)

D

10

5

PW = 10 ms (1 Shot)

DC Operation (T

2
1

0.5

Operation in this Area
is Limited by R

Drain Current I

0.2

0.1

Ta = 25°C

0.05
1 3 30 300

DS (on)

2SK1567
2SK1566

10 100 1,000

Drain to Source Voltage V

100 µs

1 ms

C

= 25°C)

DS

10 µs

(V)

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

10 µ

D=1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

θch–c (t) = γ
θch–c = 3.57°C/W, T

P

DM

PW

T

(t) · θch–c

S

TC = 25°C

= 25°C

C

PW

D =

T

4

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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