HIT 2SK1403A, 2SK1403 Datasheet
2SK1403, 2SK1403A
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK1403, 2SK1403A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1403 V
DSS
2SK1403A 650
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
600 V
±30 V
8A
32 A
8A
100 W
2
2SK1403, 2SK1403A
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source K1403 V
(BR)DSS
breakdown voltage K1403A 650 — —
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage K1403 I
GSS
DSS
drain current K1403A VDS = 550 V, VGS = 0
Gate to source cutoff voltage V
Static drain to source K1403 R
GS(off)
DS(on)
on state resistance K1403A — 1.0 1.4
Forward transfer admittance |yfs| 4.0 6.5 — S ID = 4 A, VDS = 10 V *
Input capacitance Ciss — 1180 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 265 — pF f = 1 MHz
Reverse transfer capacitance Crss — 50 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
600 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.9 1.3 Ω ID = 4 A, VGS = 10 V *
— 15 — ns ID = 4 A, VGS = 10 V,
— 50 — ns RL = 7.5 Ω
— 105 — ns
—45—ns
— 0.95 — V IF = 8 A, VGS = 0
— 420 — ns IF = 8 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
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