HIT 2SK1338 Datasheet
2SK1338
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1338
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.9 1.5 — S ID = 1 A, VDS = 20 V *
Input capacitance Ciss — 425 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 175 — pF f = 1 MHz
Reverse transfer capacitance Crss — 85 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
900 — — V ID = 10 mA, VGS = 0
±30——V I
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 720 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 5.0 7.0 Ω ID = 1 A, VGS = 10 V *
— 10 — ns ID = 1 A, VGS = 10 V,
— 35 — ns RL = 30 Ω
—60—ns
—50—ns
— 0.9 — V IF = 2 A, VGS = 0
— 700 — ns IF = 2 A, VGS = 0,
900 V
±30 V
2A
6A
2A
50 W
= ±100 µA, VDS = 0
G
di
/dt = 100 A/µs
F
1
1
2
2SK1338
Power vs. Temperature Derating
60
40
20
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
5
10 V
6 V
(A)
D
Pulse Test
4
3
2
Drain Current I
1
VGS = 3.0 V
10 30 400
20 50
Drain to Source Voltage V
DS
5.5 V
5.0 V
4.5 V
4.0 V
(V)
Maximum Safe Operation Area
10
5
2
(A)
1
D
0.5
Operation in this area
is limited by R
0.2
0.1
Drain Current I
0.05
Ta = 25°C
0.02
0.01
1
3 10 30 100 300 1,000
Drain to Source Voltage V
Typical Transfer Characteristics
5
VDS = 20 V
Pulse Test
4
(A)
D
3
2
Drain Current I
1
Gate to Source Voltage V
10 µs
100 µs
DS (on)
1 ms
C
= 25°C)
(V)
DS
PW = 10 ms (1 shot)
DC Operation (T
–25°C
T
= 25°C
C
75°C
2680
410
(V)
GS
3
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