HIT 2SK1337 Datasheet
2SK1337
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
2SK1337
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch 400 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.22 0.35 — S ID = 0.2 A, VDS = 10 V *
Input capacitance Ciss — 35 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 14 — pF f = 1 MHz
Reverse transfer capacitance Crss — 3.5 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
100 — — V ID = 10 mA, VGS = 0
±20——V I
——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 80 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 3.5 4.5 Ω ID = 0.2 A, VGS = 10 V *
— 4.0 6.5 Ω ID = 0.2 A, VGS = 4 V *
—2 —nsI
—4 —nsR
—17—ns
—15—ns
— 0.9 — V IF = 0.3 A, VGS = 0
— 80 — ns IF = 0.3 A, VGS = 0,
100 V
±20 V
0.3 A
1.2 A
0.3 A
= ±100 µA, VDS = 0
G
= 0.2 A, VGS = 10 V,
D
= 150 Ω
L
di
/dt = 50 A/µs
F
1
1
1
2
2SK1337
Power vs. Temperature Derating
600
400
200
Channel Dissipation Pch (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics
1.0
0.8
(A)
D
0.6
5 V
Pulse Test10 V
VGS = 4 V
3.5 V
Maximum Safe Operation Area
5
2
1
(A)
0.5
D
0.2
0.1
Operation in this area
0.05
is limited by R
Drain Current I
0.02
0.01
Ta = 25°C
0.005
0.1
0.3 1 3 10 30 100
Drain to Source Voltage V
Typical Transfer Characteristics
1.0
0.8
(A)
D
0.6
–25°C
TC = 25°C
75°C
DS (on)
10 µs
100 µs
PW = 10 ms (1 shot)
1 ms
DC Operation
(V)
DS
VDS = 10 V
Pulse Test
0.4
Drain Current I
0.2
Drain to Source Voltage VDS (V)
3 V
2.5 V
412160
820
0.4
Drain Current I
0.2
Gate to Source Voltage V
2680
410
(V)
GS
3
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