HIT 2SK1336 Datasheet

2SK1336

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-92

G

3

2

D

S

1

1. Source

2. Drain

3. Gate

2SK1336

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

Channel dissipation Pch 400 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 0.22 0.35 — S ID = 0.2 A, VDS = 10 V *
Input capacitance Ciss — 33 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 17 — pF f = 1 MHz
Reverse transfer capacitance Crss — 5 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

60——V I

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 50 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 1.3 1.7 Ω ID = 0.2 A, VGS = 10 V *

— 1.8 2.5 Ω ID = 0.2 A, VGS = 4 V *

—2 —nsI
—4 —nsR
—18—ns
—16—ns
— 0.9 — V IF = 0.3 A, VGS = 0

— 45 — ns IF = 0.3 A, VGS = 0,

60 V
±20 V

0.3 A

1.2 A

0.3 A

= 10 mA, VGS = 0

D

= ±100 µA, VDS = 0

G

= 0.2 A, VGS = 10 V,

D

= 150 Ω

L

di

/dt = 50 A/µs

F

1

1

1

2

2SK1336

Power vs. Temperature Derating

600

400

200

Channel Dissipation Pch (mW)

0 50 100 150

Ambient Temperarure Ta (°C)

Typical Output Characteristics

1.0

0.8

(A)

D

0.6

10 V 6 V

4 V

Pulse Test

3.5 V

3 V

0.4

Maximum Safe Operation Area
5
3

1

(A)

D

0.3

DS (on)

Operation in this area

is limited by R

DC Operation (T

0.1

0.03

Drain Current I

0.01

Ta = 25°C

0.005

0.1 0.3 1 3 10 30
Drain to Source Voltage V

Typical Transfer Characteristics

1.0
V

= 10 V

DS

Pulse Test

0.8

(A)

D

0.6

0.4

10 µs

100 µs

PW = 10 ms (1 Shot)

1 ms

C

= 25°C)

100

(V)

DS

Drain Current I

0.2

Drain to Source Voltage V

2.5 V

V

= 2 V

GS

2680

410

(V)

DS

Drain Current I

0.2

25°C

TC = 75°C

Gate to Source Voltage V

–25°C

1340

25

(V)

GS

3