HIT 2SK1335-S, 2SK1335-L Datasheet
2SK1335(L), 2SK1335(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1335(L), 2SK1335(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
200 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
3A
Drain peak current I
D(pulse)
*
1
12 A
Body to drain diode reverse drain current I
DR
3A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
200 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
— — 100 µAV
DS
= 160 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
— 0.5 0.8 Ω ID = 2 A, VGS = 10 V *
1
Forward transfer admittance |yfs| 1.5 2.3 — S ID = 2 A, VDS = 10 V *
1
Input capacitance Ciss — 380 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 150 — pF f = 1 MHz
Reverse transfer capacitance Crss — 35 — pF
Turn-on delay time t
d(on)
— 10 — ns ID = 2 A, VGS = 10 V,
Rise time t
r
— 27 — ns RL = 15 Ω
Turn-off delay time t
d(off)
—30—ns
Fall time t
f
—20—ns
Body to drain diode forward
voltage
V
DF
— 1.0 — V IF = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 120 — ns IF = 3 A, VGS = 0,
di
F
/dt = 50 A/µs
Note: 1. Pulse test
2SK1335(L), 2SK1335(S)
3
30
20
10
0 50 100 150
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
50
10
5
2
1
0.1
0.05
10 100 1,000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
0.2
0.5
1 3 30 300
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation (T
C
= 25°C)
PW = 10 ms (1 Shot)
Operation in this Area
is Limited by R
DS (on)
5
820
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
4
1
41216
Pulse Test
0
2
3
5.5 V
5.0 V
V
GS
= 4.0 V
7 V
10 V
4.5 V
Drain Current I
D
(A)
6 V
5
410
Gate to Source Voltage VGS (V)
Drain Current I
D
(A)
Typical Transfer Characteristics
4
1
268
–25°C
0
2
3
V
DS
= 10 V
Pulse Test
75°C
Ta = 25°C
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