HIT 2SK1334 Datasheet
2SK1334
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary Breakdown
• Suitable for switching regulator and DC-DC converter
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1334
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)
200 V
±20 V
1A
2A
1A
1W
2
2SK1334
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.4 0.6 — S ID = 0.5 A, VDS = 10 V *
Input capacitance Ciss — 80 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 40 — pF f = 1 MHz
Reverse transfer capacitance Crss — 7 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Notes: 1. Pulse test
2. Marking for 2SK1334 is “BY”.
200 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 160 V, VGS = 0
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
— 2.5 3.8 Ω ID = 0.5 A, VGS = 10 V *
— 4.5 7.0 Ω ID = 2 A, VGS = 10 V *
—5 —nsI
—8 —nsR
= 0.5 A, VGS = 10 V,
D
= 60 Ω
L
—10—ns
—7 —ns
— 1.0 — V IF = 1 A, VGS = 0
— 75 — ns IF = 1 A, VGS = 0,
di
/dt = 50 A/µs
F
1
1
1
3
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