HIT 2SK1317 Datasheet
Application
High speed power switching
Features
2SK1317
Silicon N-Channel MOS FET
• High breakdown voltage V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver
= 1500 V
DSS
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V *
Input capacitance Ciss — 990 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 125 — pF f = 1 MHz
Reverse transfer capacitance Crss — 60 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
1500 — — V ID = 10 mA, VGS = 0
——±1µAVGS = ±20 V, VDS = 0
— — 500 µAVDS = 1200 V, VGS = 0
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
—9 12Ω I
— 17 — ns ID = 2 A, VGS = 10 V,
— 70 — ns RL = 15 Ω
— 110 — ns
—60—ns
— 0.9 — V IF = 2 A, VGS = 0
— 1750 — ns IF = 2 A, VGS = 0,
1500 V
±20 V
2.5 A
7A
2.5 A
100 W
= 2 A, VGS = 15 V *
D
di
/dt = 100 A/µs
F
1
1
2
2SK1317
Power vs. Temperature Derating
120
80
40
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
(A)
D
5
4
3
Pulse Test
15 V
10 V
8 V
7 V
10
Maximum Safe Operation Area
10 µs
100 µs
1 ms
C
= 25°C)
(A)
1.0
D
0.3
3
PW = 10 ms (1 Shot)
DC Operation (T
0.1
Drain Current I
Operation in this area
is limited by R
0.03
DS (on)
Ta = 25°C
0.01
10 30 300 3,000
100 1,000 10,000
Drain to Source Voltage V
Typical Transfer Characteristics
2.0
V
= 20 V
DS
Pulse Test
(A)
D
1.6
1.2
DS
(V)
2
Drain Current I
1
0
20 60 80
Drain to Source Voltage V
6 V
5 V
V
= 4 V
GS
40 100
(V)
DS
0.8
0.4
TC = 25°C
–25°C
Drain Current I
0
Gate to Source Voltage V
75°C
268
4
GS
10
(V)
3
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