HIT 2SK1314-S, 2SK1314-L, 2SK1313-S, 2SK1313-L Datasheet

2SK1313(L)(S), 2SK1314(L)(S)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

3

2

1

4

3

2

1

4

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

D

G

S

2SK1313(L)(S), 2SK1314(L)(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1313 V

DSS

450 V

2SK1314 500

Gate to source voltage V

GSS

±30 V

Drain current I

D

5A

Drain peak current I

D(pulse)

*

1

20 A

Body to drain diode reverse drain current I

DR

5A

Channel dissipation Pch*

2

50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

C

= 25°C