HIT 2SK1300 Datasheet
2SK1300
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1300
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
100 V
±20 V
10 A
40 A
10 A
40 W
2
2SK1300
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 4.5 7.0 — S ID = 5 A, VDS = 10 V *
Input capacitance Ciss — 525 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 205 — pF f = 1 MHz
Reverse transfer capacitance Crss — 60 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
100 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 80 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.20 0.25 Ω ID = 5 A, VGS = 10 V *
— 0.25 0.35 Ω ID = 5 A, VGS = 4 V *
—5 —nsI
= 5 A, VGS = 10 V,
D
— 50 — ns RL = 6 Ω
— 170 — ns
—75—ns
— 1.2 — V IF = 10 A, VGS = 0
— 220 — ns IF = 10 A, VGS = 0,
di
/dt = 50 A/µs
F
1
1
1
3
Loading...