HIT 2SK1299-S, 2SK1299-L Datasheet
2SK1299(L), 2SK1299(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1299(L), 2SK1299(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
100 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
3A
Drain peak current I
D(pulse)
*
1
12 A
Body to drain diode reverse drain current I
DR
3A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
2SK1299(L), 2SK1299(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
— — 100 µAV
DS
= 80 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
— 0.25 0.35 Ω ID = 2 A, VGS = 10 V *
1
— 0.30 0.45 Ω ID = 2 A, VGS = 4 V 1*
Forward transfer admittance |yfs| 2.4 4.0 — S ID = 2 A, VDS = 10 V *
1
Input capacitance Ciss — 400 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 165 — pF f = 1 MHz
Reverse transfer capacitance Crss — 45 — pF
Turn-on delay time t
d(on)
—5 —nsI
D
= 2 A, VGS = 10 V,
Rise time t
r
— 35 — ns RL = 15 Ω
Turn-off delay time t
d(off)
— 160 — ns
Fall time t
f
—60—ns
Body to drain diode forward
voltage
V
DF
— 1.0 — V IF = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 135 — ns IF = 3 A, VGS = 0,
di
F
/dt = 50 A/µs
Note: 1. Pulse test
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