HIT 2SK1162, 2SK1161 Datasheet

2SK1161, 2SK1162

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1161, 2SK1162

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1161 V

DSS

2SK1162 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V
10 A
30 A
10 A
100 W

2