HIT 2SK1152-S, 2SK1152-L, 2SK1151-S, 2SK1151-L Datasheet
2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1151(L)(S), 2SK1152(L)(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1151 V
DSS
450 V
2SK1152 500
Gate to source voltage V
GSS
±30 V
Drain current I
D
1.5 A
Drain peak current I
D(pulse)
*
1
6A
Body to drain diode reverse drain current I
DR
1.5 A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
C
= 25°C
2SK1151(L)(S), 2SK1152(L)(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1151 V
(BR)DSS
450 — — V ID = 10 mA, VGS = 0
breakdown voltage 2SK1152 500
Gate to source breakdown
voltage
V
(BR)GSS
±30——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±25 V, VDS = 0
Zero gate voltage 2SK1151 I
DSS
— — 100 µAV
DS
= 360 V, VGS = 0
drain current 2SK1152 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static Drain to source 2SK1151 R
DS(on)
— 3.5 5.5 Ω ID = 1 A, VGS = 10 V *
1
on stateresistance 2SK1152 — 4.0 6.0
Forward transfer admittance |yfs| 0.6 1.1 — S ID = 1 A, VDS = 20 V *
1
Input capacitance Ciss — 160 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 45 — pF f = 1 MHz
Reverse transfer capacitance Crss — 5 — pF
Turn-on delay time t
d(on)
—5 —nsI
D
= 1 A, VGS = 10 V,
Rise time t
r
— 10 — ns RL = 30 Ω
Turn-off delay time t
d(off)
—20—ns
Fall time t
f
—10—ns
Body to drain diode forward
voltage
V
DF
— 1.0 — V IF = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 220 — ns IF = 1.5 A, VGS = 0,
di
F
/dt = 100 A/µs
Note: 1. Pulse test
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