HIT 2SK1070 Datasheet
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
MPAK
2SK1070
3
1
2
1. Drain
2. Source
3. Gate
2SK1070
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Gate to drain voltage V
Gate to source voltage V
Drain current I
Gate current I
GDO
GSO
D
G
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate cutoff current I
Gate to source breakdown
GSS
V
(BR)GSS
voltage
Drain current I
Gate to source cutoff voltage V
Forward transfer admittance
DSS
GS(off)
y
fs
Input capacitance Ciss — 9 — pF VDS = 5 V, VGS = 0, f = 1 MHz
Note: 1. The 2SK1070 is grouped by I
Grade B C D E
Mark PIB PIC PID PIE
I
DSS
6 to 14 12 to 22 18 to 30 27 to 40
— — –10 nA VGS = –15 V, VDS = 0
–22 — — V IG = –10 µA, VDS = 0
1
*
6 — 40 mA V
0 — –2.5 V VDS = 5 V, ID = 10 µA
20 30 — mS V
as follows.
DSS
–22 V
–22 V
50 mA
10 mA
= 5 V, VGS = 0, Pulse test
DS
= 5 V, VGS = 0, f = 1 kHz
DS
See characteristic curves of 2SK435.
2
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