HIT 2SK1058, 2SK1057, 2SK1056 Datasheet
2SK1056, 2SK1057, 2SK1058
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1056 V
DSX
2SK1057 140
2SK1058 160
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
DR
1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
120 V
±15 V
7A
7A
100 W
2
2SK1056, 2SK1057, 2SK1058
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1056 V
(BR)DSX
breakdown voltage 2SK1057 140
2SK1058 160
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff voltage V
Drain to source saturation
V
GS(off)
DS(sat)
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V *
Input capacitance Ciss — 600 — pF VGS = –5 V, VDS = 10 V,
Output capacitance Coss — 350 — pF f = 1 MHz
Reverse transfer capacitance Crss — 10 — pF
Turn-on time t
Turn-off time t
on
off
Note: 1. Pulse test
120 — — V ID = 10 mA, VGS = –10 V
±15——V I
= ±100 µA, VDS = 0
G
0.15 — 1.45 V ID = 100 mA, VDS = 10 V
——12V I
= 7 A, VGD = 0 *
D
1
— 180 — ns VDD = 20 V, ID = 4 A,
—60—ns
1
3
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