HIT 2SJ78, 2SJ77, 2SJ76 Datasheet
2SJ76, 2SJ77, 2SJ78, 2SJ79
Silicon P-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed power switching
Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216
Features
• Suitable for direct mounting
• High forward transfer admittance
• Excellent frequency response
• Enhancement-mode
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Source
(Flange)
3. Drain
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SJ76 V
DSX
2SJ77 –160
2SJ78 –180
2SJ79 –200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
GSS
D
DR
Channel dissipation Pch 1.75 W
1
Pch*
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
–140 V
±15 V
–500 mA
–500 mA
30 W
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ76 V
(BR)DSX
–140 — — V VGS = 2 V, ID = –1 mA
breakdown voltage 2SJ77 –160 — — V
2SJ78 –180 — — V
2SJ79 –200 — — V
Gate to source breakdown
V
(BR)GSS
±15——V I
= ±10 µA, VDS = 0
G
voltage
Gate to source voltage V
Drain to source saturation
V
GS(on)
DS(sat)
–0.2 — –1.5 V ID = –10 mA, VDS = –10 V*
— — –2.0 V ID = –10 mA, VGD = 0 *
1
voltage
Forward transfer admittance |yfs|2035—mSI
= –10 mA, VDS = –20 V*
D
Input capacitance Ciss — 120 — pF VDS = –10 V, ID = –10 mA,
Reverse transfer capacitance Crss — 4.8 — pF f = 1 MHz
Note: 1. Pulse test
1
1
2
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