HIT 2SJ587 Datasheet

Silicon P Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)
RDS = 15 typ. (VGS = -2.5 V , ID = -10 mA)

• 2.5 V gate drive device.

• Small package (SMPAK)

Outline

2SJ587

ADE-208-801 (Z)

1st.Edition.

June 1999

SMPAK

2

G

3

1

2

D

3

1. Source

2. Gate

3. Drain

1

S

2SJ587

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 32.5 50 — mS I
Input capacitance Ciss — 13 — pF VDS = -10 V
Output capacitance Coss — 10 — pF VGS = 0
Reverse transfer capacitance Crss — 1.8 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is DP

-20 — — V ID = -100 µA, VGS = 0

±10 — — V IG = ±100 µA, VDS = 0

——±5 µAV
——-1µAV

-0.8 — -1.8 V ID = -10µA, VDS = -5 V
— 4.1 5.0 Ω I
— 6.0 8.5 Ω I

—22—nsI
—48—nsR
—50—ns
—60—ns

-20 V
±10 V

-50 mA

-200 mA

-50 mA
100 mW

= ±8 V, VDS = 0

GS

= -20 V, VGS = 0

DS

= -25 mA,VGS = -4 V

D

= -10 mA,VGS = -2.5 V

D

= -25 mA, VDS = -10 V

D

= -25 mA, VGS = -4 V

D

= 400 Ω

L

Note 3

Note 3

Note 3

2

Main Characteristics

2SJ587

Power vs.Temperature Derating

200

150

100

50

Channel Dissipation *Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic board.(12.5x20x0.7mm)

Typical Output Characteritics

-0.2

-6 V

-5 V

-4 V

Pulse Test

-0.16

D

-0.12

-3 V

-0.08

Maximum Safe Operation Area

-5

-2

-1.0

-0.5

-0.2

D

-0.1

-0.05

-0.02

-0.01

-0.005

Drain Current I (A)

-0.002

-0.001

-0.0005

-0.05

Operation in this area
is limited by RDS(on)

Ta=25 °C

-0.1 -1.0

-0.2 -0.5

Drain to Source Voltage V (V)

Value on the alumina ceramic board.(12.5x20x0.7mm)

DC Operation

-2 -5

-10
DS

PW = 10 ms

(1 shot)

-20

Typical Transfer Characteristics

-0.2

-0.16

D

-0.12

-0.08

10 µs

100 µs

1 ms

-50

Drain Current I (A)

-0.04

0

-2 -4- -6 -8 -10

Drain to Source Voltage V (V)

V = -2V

GS

DS

Drain Current I (A)

-0.04
75 °C

0

-1 -2 -3 -4 -5

Gate to Source Voltage V (V)

Tc = –25 °C

V = -10 V

25 °C

Pulse Test

DS

GS

3