HIT 2SJ575 Datasheet

Silicon P Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA)

• 4 V gate drive device.

• Small package (MPAK)

Outline

2SJ575

ADE-208-740B (Z)

3rd.Edition.

June 1999

MPAK

2

G

3

1

D

3

1

S

2

1. Source

2. Gate

3. Drain

2SJ575

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note 2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 68 105 — mS I
Input capacitance Ciss — 25 — pF VDS = -10 V
Output capacitance Coss — 20 — pF VGS = 0
Reverse transfer capacitance Crss — 8 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is AP

-30 — — V ID = -100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5 µAVGS = ±16 V, VDS = 0
——-1µAVDS = -30 V, VGS = 0

-1.3 — -2.3 V ID = -10µA, VDS = -5 V
— 2.8 3.3 Ω I
— 5.7 7.9 Ω I

—10—nsI
—15—nsR
—40—ns
—45—ns

-30 V
±20 V

-100 mA

-400 mA

-100 mA
400 mW

= -50 mA,VGS = -10 V

D

= -50 mA,VGS = -4 V

D

= -50 mA, VDS = -10 V

D

= -50mA, VGS = -10 V

D

= 200Ω

L

Note 3

Note 3

Note 3

2

Main Characteristics

2SJ575

800

Power vs. Temperature Derating

600

400

200

Channel Dissipation *Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

*Value on the alumina ceramic boad (12.5x20x0.7mm)

Typical Output Characteristics

-6 V

-0.5

-0.4

D

-7 V
Pulse Test

-5V

-0.3

Mavimum Safe Operation Area

-5

-2

-1.0

-0.5

D

-0.2

-0.1

-0.05

-0.02
Operation in this area

-0.01

-0.005

Drain Current I (A)

-0.002

-0.001

-0.0005

is limited by RDS(on)

Ta=25 °C

-0.05

-0.1 -1.0 -10 -50

-0.2 -0.5 -2 -5

Drain to Source Voltage V (V)

Value on the alumina ceramic boad (12.5x20x0.7mm)

PW = 10 ms

DC Operation

(1 shot)

-20

DS

Typical Transfer Characteristics

-0.5

25 °C

Tc = –25 °C

D

-0.4
75 °C

-0.3

10 µs
100 µs
1 ms

-0.2

Drain Current I (A)

-0.1

0

-2 -4 -6 -8 -10

Drain to Source Voltage V (V)

-4 V

V = -3 V

GS

DS

-0.2

Drain Current I (A)

-0.1

0

-2 -4 -6 -8 -10

Gate to Source Voltage V (V)

V = -10 V

DS

Pulse Test

GS

3