HIT 2SJ555 Datasheet
Features
• Low on-resistance
R
= 0.017Ω typ.
DS(on)
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
2SJ555
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-634A (Z)
2nd. Edition
Jun 1998
G
TO–3P
D
1. Gate
1
S
2
3
2. Drain
(Flange)
3. Source
2SJ555
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
–60 V
±20 V
–60 A
–240 A
–60 A
–60 A
308 mJ
125 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
–60 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.017 0.022 Ω ID = –30A, VGS = –10V
— 0.024 0.036 Ω ID = –30A, VGS = –4V
Forward transfer admittance |yfs| 2745—S ID = –30A, VDS = –10V
Input capacitance Ciss — 4100 — pF VDS = –10V
Output capacitance Coss — 2100 — pF VGS = 0
Reverse transfer capacitance Crss — 450 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 32 — ns VGS = –10V, ID = –30A
— 270 — ns RL = 1Ω
— 570 — ns
— 360 — ns
— –1.1 — V IF = –60A, VGS = 0
— 115 — ns IF = –60A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SJ555
Power vs. Temperature Derating
200
150
100
50
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–10 V
–100
–4.5 V
–5 V
–80
D
–8 V
–60
–40
PulseTest
–4 V
–3.5 V
–1000
Maximum Safe Operation Area
–300
–100
D
–30
–10
Operation in
–3
this area is
–1
limited by R
Drain Current I (A)
–0.3
Ta = 25 °C
–0.1
–0.1 –0.3 –1 –3 –10
Drain to Source Voltage V (V)
–100
–80
D
Typical Transfer Characteristics
V = –10 V
DS
Pulse Test
–60
–40
10 µs
100 µs
PW = 10 ms (1 shot)
DC Operation (Tc = 25 °C)
DS(on)
1 ms
–30 –100
DS
25 °C
Drain Current I (A)
–20
0
–4 –8 –12 –16 –20
Drain to Source Voltage V (V)
–3 V
V = –2.5 V
GS
DS
Drain Current I (A)
–20
75 °C
Tc = –25 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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