HIT 2SJ554 Datasheet
Features
• Low on-resistance
R
= 0.028Ω typ.
DS(on)
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
2SJ554
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-628B (Z)
3rd. Edition
Jun 1998
TO–3P
G
D
1.Gate
1
S
2
3
2.Drain
(Flange)
3.Source
2SJ554
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
–60 V
±20 V
–45 A
–180 A
–45 A
–45 A
173 mJ
100 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
–60 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.028 0.037 Ω ID = –25A, VGS = –10V
— 0.038 0.055 Ω ID = –25A, VGS = –4V
Forward transfer admittance |yfs| 1830—S ID = –25A, VDS = –10V
Input capacitance Ciss — 2500 — pF VDS = –10V
Output capacitance Coss — 1300 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 25 — ns VGS = –10V, ID = –25A
— 160 — ns RL = 1.2Ω
— 350 — ns
— 240 — ns
— –1.1 — V IF = –45A, VGS = 0
— 100 — ns IF = –45A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SJ554
Power vs. Temperature Derating
200
150
100
50
Channel Dissipation Pch (W)
0
50 100 150 200
Cace Temperature Tc (°C)
Typical Output Characteristics
–50
–8 V
–40
–5 V
D
–30
–4 V
V = –10 V
GS
–20
PulseTest
–3.5 V
–3 V
–1000
–100
D
–10
Maximum Safe Operation Area
Operation in
–1
Ta = 25 °C
this area is
limited by R
DS(on)
Drain Current I (A)
–0.1
–0.1 –1 –10
Drain to Source Voltage V (V)
Typical Transfer Characteristics
V = –10 V
DS
PulseTest
D
–50
–40
–30
–20
100 µs
1 ms
PW = 10 m(1 shot)
DC Operation
10 µs
–100
–10
Drain Current I (A)
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
–2.5 V
–2 V
DS
–10
Drain Current I (A)
Tc = 75 °C
25 °C
-25 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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