HIT 2SJ543 Datasheet
Features
• Low on-resistance
R
= 0.042Ω typ.
DS(on)
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
2SJ543
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-652B (Z)
3rd. Edition
Jun 1998
TO–220AB
G
D
3
1. Gate
2. Drain
(Flange)
3. Source
1
2
S
2SJ543
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
–60 V
±20 V
–20 A
–80 A
–20 A
–20 A
34 mJ
75 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
–60 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.042 0.055 Ω ID = –10A, VGS = –10V
— 0.065 0.095 Ω ID = –10A, VGS = –4V
Forward transfer admittance |yfs| 1016—S ID = –10A, VDS = –10V
Input capacitance Ciss — 1750 — pF VDS = –10V
Output capacitance Coss — 800 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 16 — ns VGS = –10V, ID = –10A
— 100 — ns RL = 3Ω
— 230 — ns
— 140 — ns
— –1.0 — V IF = –20A, VGS = 0
— 100 — ns IF = –20A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SJ543
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
D
–50
–40
–10 V
–8 V
–4.5 V
–6 V
–5 V
–30
–20
Pulse Test
–4 V
–3.5 V
–1000
Maximum Safe Operation Area
–300
–100
D
–30
–10
–3
–1
Operation in
this area is
Drain Current I (A)
limited by R
–0.3
Ta = 25 °C
–0.1
–0.1 –0.3 –1 –3 –10
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–50
V = –10 V
DS
Pulse Test
–40
D
–30
–20
PW = 10 ms (1 shot)
DC Operation
(Tc = 25 °C)
DS(on)
Tc = –25 °C
25 °C
10 µs
100 µs
1 ms
–30 –100
DS
Drain Current I (A)
–10
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
–3 V
V = –2.5 V
GS
DS
Drain Current I (A)
–10
75 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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