HIT 2SJ539 Datasheet
Features
• Low on-resistance
R
= 0.16 Ω typ.
DS(on)
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
2SJ539
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-657A (Z)
2nd. Edition
Jun 1998
TO–220AB
G
D
3
1. Gate
2. Drain
(Flange)
3. Source
1
2
S
2SJ539
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalenche current I
Avalenche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
AR
Note1
Note3
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
–60 V
±20 V
–10 A
–40 A
–10 A
–10 A
8.5 mJ
40 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
–60 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.16 0.21 Ω ID = –5A, VGS = –10V
— 0.23 0.36 Ω ID = –5A, VGS = –4V
Forward transfer admittance |yfs| 3.5 5.5 — S ID = –5A, VDS = –10V
Input capacitance Ciss — 400 — pF VDS = –10V
Output capacitance Coss — 220 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 10 — ns VGS = –10V, ID = –5A
— 45 — ns RL = 6Ω
—65—ns
—50—ns
— –1.2 — V IF = –10A, VGS = 0
— 70 — ns IF = –10A, VGS = 0
diF/ dt = 50A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SJ539
Power vs. Temperature Derating
80
60
40
20
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–10
–4 V
–10 V
–8
D
–6 V
–5 V
–6
PulseTest
–3.5 V
–100
Maximum Safe Operation Area
–50
–20
D
–10
PW = 10 ms (1 shot)
DC Operation (Tc=25℃)
1 ms
–5
–2
–1
Drain Current I (A)
–0.5
Operation in
this area is
limited by R
DS(on)
–0.2
Ta = 25 °C
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
–10
V = –10 V
DS
PulseTest
–8
D
–6
10 µs
100 µs
–4
Drain Current I (A)
–2
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
–3 V
V = –2.5 V
GS
DS
–4
Tc = 75 °C
–2
Drain Current I (A)
25 °C
–25 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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