HIT 2SJ531 Datasheet
Features
• Low on-resistance
R
= 0.050Ω typ.
DS(on)
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
2SJ531
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-646A (Z)
2nd. Edition
Jun 1998
TO–220CFM
G
D
1
2
3
S
1. Gate
2. Drain
3. Source
2SJ531
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
–60 V
±20 V
–18 A
–72 A
–18 A
–18 A
27 mJ
30 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
–60 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.050 0.065 Ω ID = –9A, VGS = –10V
— 0.070 0.110 Ω ID = –9A, VGS = –4V
Forward transfer admittance |yfs| 1016—S ID = –9A, VDS = -10V
Input capacitance Ciss — 1300 — pF VDS = –10V
Output capacitance Coss — 650 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 14 — ns VGS = –10V, ID = –9A
— 95 — ns RL =3.33Ω
— 190 — ns
— 135 — ns
— –1.0 — V IF = –18A, VGS = 0
— 70 — ns IF = –18A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SJ531
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
–6 V
–10 V
–20
–4 V
–16
D
–3.5 V
–12
–8
Drain Current I (A)
–4
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
Pulse Test
–3 V
–2.5 V
V = –2 V
GS
DS
1000
Maximum Safe Operation Area
300
100
D
30
10
DC Operation (Tc = 25°C)
3
1
Ta = 25 °C
Operation in
this area is
limited by R
Drain Current I (A)
0.3
0.1
0.1 0.3 1
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–20
V = –10 V
DS
Pulse Test
–16
D
–12
–8
Drain Current I (A)
–4
0
Tc = 75°C
–1 –2 –3 –4 –5
Gate to Source Voltage V (V)
10 µs
10
100 µs
1 ms
30
DS
PW = 10 ms (1shot)
DS(on)
3
25°C
–25°C
GS
100
3
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