HIT 2SJ530-S, 2SJ530-L Datasheet

2SJ530(L),2SJ530(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-655B (Z)

3rd. Edition

Jun 1998

Features

• Low on-resistance

R

DS(on)

= 0.08Ω typ.

• 4V gate drive devices.

• High speed switching.

Outline

1

2

3

4

4

1

2

3

DPAK–2

D

G

S

1. Gate

2. Drain

3. Source

4. Drain

2SJ530(L),2SJ530(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–60 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–15 A

Drain peak current I

D(pulse)

Note1

–60 A

Body-drain diode reverse drain current I

DR

–15 A

Avalanche current I

AP

Note3

–15 A

Avalanche energy E

AR

Note3

19 mJ

Channel dissipation Pch

Note2

30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–60 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain current I

DSS

— — –10 µAVDS = –60 V, VGS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16V, VDS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state R

DS(on)

— 0.08 0.10 Ω ID = –8A, VGS = –10V

Note4

resistance R

DS(on)

— 0.11 0.16 Ω ID = –8A, VGS = –4V

Note4

Forward transfer admittance |yfs| 6.5 11 — S ID = –8A, VDS = –10V

Note4

Input capacitance Ciss — 850 — pF VDS = –10V
Output capacitance Coss — 420 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t

d(on)

— 12 — ns VGS = –10V, ID = –8A

Rise time t

r

— 75 — ns RL = 3.75Ω

Turn-off delay time t

d(off)

— 125 — ns

Fall time t

f

—75—ns

Body–drain diode forward voltage V

DF

— –1.1 — V IF = –15A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 70 — ns IF = –15A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SJ530(L),2SJ530(S)

3

Main Characteristics

40

30

20

10

0

50 100 150 200

–100

–30
–10

–3

–1

–0.3
–0.1

–0.1 –0.3 –1 –3 –10

–20

–16

–12

–8

–4

0

–2 –4 –6 –8 –10

0 –1–2–3–4–5

–30 –100

–1000

–300

–3.5 V

–3 V

–20

–16

–12

–8

–4

–25 °C

25 °C

Tc = 75 °C

–10 V

–6 V

–5 V

100 µs

1 ms

Ta = 25 °C

10 µs

DS

PulseTest

V = –10 V

–4 V

V = –2.5 V

GS

PulseTest

PW = 10 ms (1 shot)

DC Operation

(Tc=25℃)

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)