HIT 2SJ530-S, 2SJ530-L Datasheet

2SJ530(L),2SJ530(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-655B (Z)

3rd. Edition

Jun 1998

Features

• Low on-resistance

R

DS(on)

= 0.08Ω typ.

• 4V gate drive devices.

• High speed switching.

Outline

1

2

3

4

4

1

2

3

DPAK–2

D

G

S

1. Gate

2. Drain

3. Source

4. Drain

2SJ530(L),2SJ530(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–60 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–15 A

Drain peak current I

D(pulse)

Note1

–60 A

Body-drain diode reverse drain current I

DR

–15 A

Avalanche current I

AP

Note3

–15 A

Avalanche energy E

AR

Note3

19 mJ

Channel dissipation Pch

Note2

30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–60 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain current I

DSS

— — –10 µAVDS = –60 V, VGS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16V, VDS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state R

DS(on)

— 0.08 0.10 Ω ID = –8A, VGS = –10V

Note4

resistance R

DS(on)

— 0.11 0.16 Ω ID = –8A, VGS = –4V

Note4

Forward transfer admittance |yfs| 6.5 11 — S ID = –8A, VDS = –10V

Note4

Input capacitance Ciss — 850 — pF VDS = –10V
Output capacitance Coss — 420 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t

d(on)

— 12 — ns VGS = –10V, ID = –8A

Rise time t

r

— 75 — ns RL = 3.75Ω

Turn-off delay time t

d(off)

— 125 — ns

Fall time t

f

—75—ns

Body–drain diode forward voltage V

DF

— –1.1 — V IF = –15A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 70 — ns IF = –15A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SJ530(L),2SJ530(S)

3

Main Characteristics

40

30

20

10

0

50 100 150 200

–100

–30
–10

–3

–1

–0.3
–0.1

–0.1 –0.3 –1 –3 –10

–20

–16

–12

–8

–4

0

–2 –4 –6 –8 –10

0 –1–2–3–4–5

–30 –100

–1000

–300

–3.5 V

–3 V

–20

–16

–12

–8

–4

–25 °C

25 °C

Tc = 75 °C

–10 V

–6 V

–5 V

100 µs

1 ms

Ta = 25 °C

10 µs

DS

PulseTest

V = –10 V

–4 V

V = –2.5 V

GS

PulseTest

PW = 10 ms (1 shot)

DC Operation

(Tc=25℃)

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)

2SJ530(L),2SJ530(S)

4

–4.0

–3.2

–2.4

–1.6

–0.8

0

–4 –8 –12 –16 –20

0.5

0.4

0.3

0.2

0.1

–40 0 40 80 120 160

0

–10 V

GS

V = –4 V

1

0.5

0.05

0.02

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

–10 A

–5 A

0.2

0.1
–10 V

V = –4 V

GS

–15 A

-5,–10A

PulseTest

PulseTest

PulseTest

–0.1 –3 –100

0.1

30

100

10

1

0.3

–0.3 –1 –10 –30

3

–15 A

–10 A

–5 A

I = –15 A

D

75 °C

25 °C

Ta = –25 °C

V = –10 V

DS

PulseTest

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

2SJ530(L),2SJ530(S)

5

500

200

100

20

50

10

5
–0.1 –0.3 –3

0 –10 –20 –30 –40 –50

5000

1000

300

100

0

–20

–40

–60

–80

0

0

–4

–8

–12

–16

–20–100

81624

32

40

1000

100

300

30

3

10

1

–0.1 –0.3 –1 –3 –10 –20

–1 –10

30

10

V = 0
f = 1 MHz

GS

Ciss

Coss

Crss

DS

V

GS

V

D

I = –15 A

V = –10 V

–25 V
–50 V

DD

V = –50 V

–25 V
–10 V

DD

t

f

r

t

d(off)

t

d(on)

t

DD

V = –10 V, V = –30 V
Pw = 5 µs, duty < 1 %

GS

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

–20

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

2SJ530(L),2SJ530(S)

6

–20

–16

–12

–8

–4

0

–0.4 –0.8 –1.2 –1.6 –2.0

D. U. T

Rg

I
Monitor

AP

V
Monitor

DS

V

DD

50Ω

Vin
–15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1

V

V – V

AR

AP

DSS

DSS DD

2

V = 0, 5 V

GS

–10 V

–5 V

PulseTest

20

16

12

8

4

25 50 75 100 125 150

0

I = –15 A
V = –25 V
duty < 0.1 %
Rg > 50

AP

DD

Ω

Repetitive Avalanche Energy E (mJ)

AR

Maximum Avalanche Energy vs.

Channel Temperature Derating

Avalanche Test Circuit Avalanche Waveform

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Channel Temperature Tch (°C)

2SJ530(L),2SJ530(S)

7

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 4.17 °C/W, Tc = 25 °C

θ γ θ
θ

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1 shot Pulse

Tc = 25°C

Vin Monitor

D.U.T.

Vin
–10 V

R

L

V
= –30 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Waveform

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

γ

Normalized Transient Thermal Impedance vs. Pulse Width

2SJ530(L),2SJ530(S)

8

Package Dimensions

Unit: mm

6.5 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.3 ± 0.2

0.55 ± 0.1

2.29 ± 0.5

0.55 ± 0.1 1.2 typ

1.7 ± 0.5

5.5 ± 0.53.1 ± 0.5

16.2 ± 0.5

2.29 ± 0.5

6.5 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.3 ± 0.5

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

9.5 ± 0.5

2.5 ± 0.5

2.29 ± 0.5

2.29 ± 0.5

1.2 Max

0.55 ± 0.1

0 ~ 0.25

0.8 ± 0.1

type

L

S

type

4.7 ± 0.5

HIitachiCode
EIAJ(Ltype)

EIAJ(Stype)

JEDEC

DPAK–2

SC–63
SC–64

—

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

For further information write to: