HIT 2SJ529-S, 2SJ529-L Datasheet

2SJ529(L),2SJ529(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-654A (Z)

2nd. Edition

Jun 1998

Features

• Low on-resistance

R

DS(on)

= 0.12 Ω typ.

• 4 V gete drive devices

• High speed switching

Outline

1

2

3

4

4

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

DPAK–2

D

G

S

2SJ529(L),2SJ529(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–60 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

–10 A

Drain peak current I

D(pulse)

Note1

–40 A

Body-drain diode reverse drain current I

DR

–10 A

Avalenche current I

AP

Note3

–10 A

Avalenche energy E

AR

Note3

8.5 mJ

Channel dissipation Pch

Note2

20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–60 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain current I

DSS

— — –10 µAVDS = –60 V, VGS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16V, VDS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state R

DS(on)

— 0.12 0.16 Ω ID = –5A, VGS = –10V

Note4

resistance R

DS(on)

— 0.17 0.24 Ω ID = –5A, VGS = –4V

Note4

Forward transfer admittance |yfs| 4.5 7.5 — S ID = –5A, VDS = –10V

Note4

Input capacitance Ciss — 580 — pF VDS = –10V
Output capacitance Coss — 300 — pF VGS = 0
Reverse transfer capacitance Crss — 85 — pF f = 1MHz
Turn-on delay time t

d(on)

— 10 — ns VGS = –10V, ID = –5A

Rise time t

r

— 40 — ns RL = 6Ω

Turn-off delay time t

d(off)

—85—ns

Fall time t

f

—60—ns

Body–drain diode forward voltage V

DF

— –1.2 — V IF = –10A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 60 — ns IF = –10A, VGS = 0

diF/ dt = 50A/µs

Note: 4. Pulse test

2SJ529(L),2SJ529(S)

3

Main Characteristics

40

30

20

10

0

50 100 150 200

–10

–8

–6

–4

–2

0

–2 –4 –6 –8 –10

–5 V
–4 V

0 –1–2–3–4–5

–10 V

–3.5 V

–3 V

–10

–8

–6

–4

–2

–2.5 V

–25 °C

25 °CTc = 75 °C

V = –2 V

GS

DS

Pulse Test

V = –10 V

–0.1 –0.3 –1 –3 –10 –30 –100

–100

–20
–10

–2
–1

–0.2
–0.1

1 ms

Ta = 25 °C

100 µs

10 µs

–0.5

–5

–50

PW = 10 ms (1 shot)

DC Operation (Tc=25°C)

Pulse Test

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)