HIT 2SJ518 Datasheet
Features
• Low on-resistance
R
= 0.35 Ω typ. at (VGS = –10V, ID = –1A)
DS(on)
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
2SJ518
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-580B (Z)
3rd. Edition
Jun 1998
G
UPAK
1
2
3
D
4
1. Gate
2. Drain
3. Source
S
4. Drain
2SJ518
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalenche current I
Avalenche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note2
AP
AR
Note1
Note3
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. value at Tch = 25°C, Rg ≥ 50 Ω
3. Value at when using the aluminaceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
–60 V
±20 V
–2 A
–4 A
–2 A
–2 A
0.34 mJ
1W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
DS(on)
DS(on)
–60 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.35 0.46 Ω ID = –1A, VGS = –10V
— 0.45 0.63 Ω ID = –1A, VGS = –4V
Forward transfer admittance |yfs| 1.2 2.0 — S ID = –1A, VDS = –10V
Input capacitance Ciss — 220 — pF VDS = –10V
Output capacitance Coss — 110 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 10 — ns VGS = –10V, ID = –1A
— 11 — ns RL = 30Ω
—45—ns
—30—ns
— –1.05 — V ID = –2A, VGS = 0
— 50 — ns IF = –2A, VGS = 0
diF/ dt = 50A/µs
Note: 4. Pulse test
5. Marking is “AZ”
Note4
Note4
Note4
2
Main Characteristics
2SJ518
Power vs. Temperature Derating
2.0
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
1.5
1.0
0.5
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–5
–10 V
–6 V
–4
–5 V
Pulse Test
–100
–30
–10
D
–0.3
Drain Current I (A)
–0.1
–0.03
–0.01
Maximum Safe Operation Area
–3
–1
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
–0.1 –0.3 –1 –3 –10
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–5
V = –10 V
DS
Pulse Test
–4
100 µs
PW = 10 ms
(1 shot)
DC Operation
1 ms
–30 –100
DS
D
–4 V
–3
–2
Drain Current I (A)
–1
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
–3.5 V
–3 V
V = –2.5 V
GS
DS
D
–3
–2
Tc = 75 °C
Drain Current I (A)
–1
25 °C
–25 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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