HIT 2SJ517 Datasheet
Features
• Low on-resistance
R
= 0.18 Ω typ. (at V
DS(on)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
2SJ517
Silicon P Channel MOS FET
High Speed Power Switching
=–4V, ID =–1A)
GS
ADE-208-575B (Z)
3rd. Edition
Jun 1998
G
UPAK
1
2
3
D
4
1. Gate
2. Drain
3. Source
S
4. Drain
2SJ517
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 100µs, duty cycle ≤ 10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
(BR)DSS
(BR)GSS
DSS
GSS
GS(off)
R
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Forward transfer admittance |yfs| 1.8 3.0 — S ID = –1A, VDS = –10V
Input capacitance Ciss — 320 — pF VDS = –10V
Output capacitance Coss — 190 — pF VGS = 0
Reverse transfer capacitance Crss — 90 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
4. Marking is “YY”.
–20 — — V ID = –10mA, VGS = 0
±10——V I
— — –10 µAVDS = –20 V, VGS = 0
——±10 µAVGS = ±8V, VDS = 0
–0.5 — –1.5 V ID = –1mA, VDS = –10V
— 0.18 0.24 Ω ID = –1A, VGS = –4V
— 0.27 0.43 Ω ID = –1A, VGS = –2.5V
— 14 — ns ID = –1A, RL = 10Ω
— 75 — ns VGS = –4V
—90—ns
—90—ns
— –0.95 — V IF = –2A, VGS = 0
— 70 — ns IF = –2A, VGS = 0
–20 V
±10 V
–2 A
–4 A
–2 A
1W
= ±100µA, VDS = 0
G
diF/ dt =50A/µs
Note3
Note3
Note3
2
Main Characteristics
2SJ517
Power vs. Temperature Derating
2.0
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
1.5
1.0
0.5
Channel Dissipation Pch (W)
0
–5
–4
D
–3
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10 V
–4 V
–3 V
–2.5 V
Pulse Test
–10
D
–0.3
–0.1
Drain Current I (A)
–0.03
–0.01
D
Maximum Safe Operation Area
–3
–1
Operation in
this area is
limited by R
Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–5
–4
–3
PW = 10 ms (1 shot)
DC Operation
DS(on)
–25°C
25°C
10 µs
100 µs
1 ms
Tc = 75°C
DS
–2
Drain Current I (A)
–1
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
V = –1.5 V
GS
–2 V
DS
–2
Drain Current I (A)
–1
0
–1 –2 –3 –4 –5
Gate to Source Voltage V (V)
V = –10 V
DS
Pulse Test
GS
3
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