HIT 2SJ506-S, 2SJ506-L Datasheet
2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.065 Ω typ. (at V
GS
= –10V, ID = –5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
2SJ506(L), 2SJ506(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
–10 A
Drain peak current I
D(pulse)
Note1
–40 A
Body to drain diode reverse drain current I
DR
–10 A
Channel dissipation Pch
Note2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2SJ506(L), 2SJ506(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30 — — V ID = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain
current
I
DSS
— — –10 µAV
DS
= –30 V, VGS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Gate to source cutoff voltage V
GS(off)
–1.0 — –2.0 V ID = –1mA, VDS = –10V
Static drain to source on state R
DS(on)
—6585mΩI
D
= –5A, VGS = –10V
Note3
resistance R
DS(on)
— 110 180 mΩ ID = –5A, VGS = –4V
Note3
Forward transfer admittance |yfs| 1016—S I
D
= –5A, VDS = –10V
Note3
Input capacitance Ciss — 660 — pF VDS = –10V
Output capacitance Coss — 440 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Turn-on delay time t
d(on)
— 12 — ns ID = –5A, RL = 2Ω
Rise time t
r
— 65 — ns VGS = –10V
Turn-off delay time t
d(off)
—85—ns
Fall time t
f
—65—ns
Body to drain diode forward
voltage
V
DF
— –1.05 — V IF = –10A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 65 — ns IF = –10A, VGS = 0
diF/ dt = 50A/µs
Note: 3. Pulse test
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