HIT 2SJ504 Datasheet
Features
• Low on-resistance
R
= 0.042Ω typ.
DS(on)
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
2SJ504
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-546
Target specification 1st. Edition
G
TO–220FM
D
S
1. Gate
2. Drain
1
2
3
3. Source
2SJ504
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
3
3
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Ta = 25°C, Rg ≥ 50 Ω, L=100µH
–60 V
±20 V
–20 A
–80 A
–20 A
–20 A
34 mJ
30 W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltege drain
I
DSS
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 1016—S I
Input capacitance Ciss — 1750 — pF VDS = –10V
Output capacitance Coss — 800 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
–60 — — V ID = –10mA, VGS = 0
±20——V I
— — –10 µAV
——±10 µAV
= ±100µA, VDS = 0
G
= –60 V, VGS = 0
DS
= ±16V, VDS = 0
GS
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.042 0.055 Ω ID = –10A, VGS = –10V*
— 0.065 0.095 Ω ID = –10A, VGS = –4V*
= 10A, VDS = 10V*
D
— 16 — ns VGS = –10V, ID = –10A
— 100 — ns RL = 3Ω
— 230 — ns
— 140 — ns
— –1.0 — V IF = –20A, VGS = 0
— 100 — ns IF = –20A, VGS = 0
diF/ dt = 50A/µs
2SJ504
1
1
1
3
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