HIT 2SJ496 Datasheet

Features
Low on-resistance
R
= 0.12typ. (at VGS = –10 V, ID = –2.5 A)
4V gate drive devices.
Large current capacitance
ID = –5 A
Outline
2SJ496
Silicon P-Channel MOS FET
High Speed Power Switching
ADE-208-482
1st. Edition
TO-92 Mod
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
2SJ496
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Avalanche current IAP* Avalanche energy EAR* Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
3
3
2
Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg 50
–60 V ±20 V –5 A –20 A –5 A –5 A
2.14 mJ
0.9 W
2
2SJ496
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage Gate to source breakdown
V
(BR)GSS
voltage Zero gate voltege drain
I
DSS
current Gate to source leak current I Gate to source cutoff voltage V Static drain to source on state
R
GSS
GS(off)
DS(on)
resistance
R
DS(on)
Forward transfer admittance |yfs|35—SI Input capacitance Ciss 600 pF VDS = –10V Output capacitance Coss 290 pF VGS = 0 Reverse transfer capacitance Crss 80 pF f = 1MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage Body to drain diode reverse
t
rr
recovery time Note: 1. Pulse test
–60 V ID = –10mA, VGS = 0
±20——V I
–10 µAV
——±10 µAV
= ±100µA, VDS = 0
G
= –60 V, VGS = 0
DS
= ±16V, VDS = 0
GS
–1.0 –2.0 V ID = –1mA, VDS = –10V — 0.12 0.16 ID = –2.5A
V
= –10V*
GS
0.17 0.24 ID = –2.5A
V
= –4V*
GS
= 2.5A, VDS = 10V*
D
1
1
10 ns VGS = –10V, ID = –2.5A — 25 ns RL = 12 —95—ns —55—ns — –1.0 V ID = –5A, VGS = 0
65 ns IF = –5A, VGS = 0
diF/ dt = 50A/µs
1
3
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