HIT 2SJ486 Datasheet
Features
• Low on-resistance
R
= 0.5 Ω typ. (at V
DS(on)
• 2.5V gate drive devices.
• Small package (MPAK).
Outline
2SJ486
Silicon P Channel MOS FET
Low FrequencyPower Switching
= –4V, ID = –100 mA)
GS
ADE-208-512 A
2nd. Edition
MPAK
G
3
1
D
S
2
1. Source
2. Gate
3. Drain
2SJ486
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
DSS
GSS
D
D(pulse)
1
*
Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltege drain
I
DSS
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
GS(off)
DS(on)
resistance
R
DS(on)
Forward transfer admittance |yfs| 0.4 0.65 — S ID = –100mA
Input capacitance Ciss — 45 — pF VDS = –10V
Output capacitance Coss — 76 — pF VGS = 0
Reverse transfer capacitance Crss — 5.4 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Notes: 1. Pulse test
2. Marking is “ZU–”.
–30 — — V ID = –10µA, VGS = 0
±10——V I
— — –1.0 µAV
——±5.0 µAV
–0.5 — –1.5 V ID = –10µA, VDS = –5V
— 0.5 0.65 Ω ID = –100mA
— 0.7 1.2 Ω ID = –40mA
— 120 — ns VGS = –4V
— 340 — ns ID = –150mA
— 850 — ns RL = 66.6Ω
— 550 — ns
–30 V
±10 V
–0.3 A
–0.6 A
= ±100µA, VDS = 0
G
DS
GS
V
GS
V
GS
V
DS
= –30 V, VGS = 0
= ±6.5V, VDS = 0
1
= –4V*
= –2.5V*
= –10V*
1
1
2
Main Characteristics
2SJ486
200
Power vs. Temperature Derating
150
100
50
Channel Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–1.0
–10 V
–0.8
D
–0.6
–5 V
–4 V
–2.5 V
–2 V
Maximum Safe Operation Area
D
–0.03
–0.01
–1
–0.3
–0.1
Operation in
this area is
limited by R
DC Operation
DS(on)
1 ms
PW = 10 ms
(1 shot)
Drain Current I (A)
–0.003
–0.001
Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–1.0
V = –10 V
DS
Pulse Test
–0.8
D
–0.6
Tc = 75 °C
DS
–0.4
Drain Current I (A)
–0.2
0
–0.2 –0.4 –0.6 –0.8 –1.0
Drain to Source Voltage V (V)
Ta = 25°C
Pulse Test
V = –1.5 V
GS
DS
–0.4
–0.2
Drain Current I (A)
25 °C
–25 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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