HIT 2SJ484 Datasheet
Features
• Low on-resistance
R
= 0.18 Ω typ. (at V
DS(on)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
2SJ484
Silicon P-Channel MOS FET
High Speed Power Switching
= –10V, ID = –1A)
GS
ADE-208-501 A
2nd. Edition
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ484
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100µs, duty cycle ≤ 10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
–30 V
±20 V
–2 A
–4 A
–2 A
1W
2
2SJ484
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltege drain
I
DSS
current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
GS(off)
DS(on)
resistance
R
DS(on)
Forward transfer admittance |yfs| 1.2 2.0 — S ID = –1A, VDS = –10V*
Input capacitance Ciss — 230 — pF VDS = –10V
Output capacitance Coss — 140 — pF VGS = 0
Reverse transfer capacitance Crss — 50 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Notes: 1. Pulse test
2. Marking is “WY”.
–30 — — V ID = –10mA, VGS = 0
±20——V I
— — –10 µAV
——±10 µAV
= ±100µA, VDS = 0
G
= –30 V, VGS = 0
DS
= ±16V, VDS = 0
GS
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.18 0.23 Ω ID = –1A, VGS = –10V*
— 0.3 0.45 Ω ID = –1A, VGS = –4V*
— 10 — ns ID = –1A, RL = 30Ω
— 30 — ns VGS = –10V
—35—ns
—30—ns
— –0.95 — V IF = –2A, VGS = 0
— 60 — ns IF = –2A, VGS = 0
diF/ dt = 50A/µs
1
1
1
3
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