HIT 2SJ483 Datasheet
Features
• Low on-resistance
R
= 0.08Ω typ (at VGS = –10 V, ID = –2.5 A)
DS(on)
• 4V gate drive devices.
• Large current capacitance
ID = –5 A
Outline
2SJ483
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-519
1st. Edition
TO-92MOD.
G
D
3
2
1
S
1. Source
2. Drain
3. Gate
2SJ483
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
Note1
Channel dissipation Pch 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
–30 V
±20 V
–5 A
–20 A
–5 A
2
2SJ483
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
DSS
GSS
GS(off)
DS(on)
resistance
R
DS(on)
Forward transfer admittance |yfs| 35—SI
Input capacitance Ciss — 630 — pF VDS = –10V
Output capacitance Coss — 390 — pF VGS = 0
Reverse transfer capacitance Crss — 135 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
–30 — — V ID = –10mA, VGS = 0
±20——V I
= ±100µA, VDS = 0
G
— — –10 µAVDS = –30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0
–1.0 — –2.0 V ID = –1mA, VDS = –10V
— 0.08 0.11 Ω ID = –2.5A
V
= –10V*
GS
— 0.12 0.17 Ω ID = –2.5A
V
= –4V*
GS
= –2.5A,
D
V
= –10V*
DS
1
1
1
— 15 — ns VGS = –10V, ID = –2.5A
— 70 — ns RL = 4Ω
—65—ns
—60—ns
— –1.0 — V ID = –5A, VGS = 0
— 60 — ns IF = –5A, VGS = 0
diF/ dt = 20A/µs
3
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