HIT 2SJ452 Datasheet
Application
Low frequency power switching
Features
• Low on-resistance.
• Low drive power
• 2.5 V gate drive device.
• Small package (MPAK).
2SJ452
Silicon P-Channel MOS FET
ADE-208-383
1st. Edition
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
2SJ452
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
DSS
GSS
D
D(pulse)
1
*
Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Marking is "ZM–".
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltage drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
R
DSS
GSS
GS(off)
DS(on)
resistance
Static drain to source on state
R
DS(on)
resistance
Foward transfer admittance |yfs| 0.1 0.19 — S ID = –100 mA*
Input capacitance Ciss — 1.1 — pF VDS = –10 V
Output capacitance Coss — 15.7 — pF VGS = 0
Reverse transfer capacitance Crss — 0.12 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay tiem t
Fall time t
d(on)
r
d(off)
f
Note: 1. Pulse Test
–50 — — V ID = –100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
— — –1.0 µAVDS = –40 V, VGS = 0
——±2.0 µAVGS = ±16 V, VDS = 0
–0.5 — –1.5 V ID = –10 µA, VDS = –5 V
1 — 5.0 7.0 Ω ID = –100 mA
2 — 7.5 12.0 Ω ID = –40 mA
— 0.45 — µsVGS = –10 V, ID = –0.1 A
— 1.3 — µsR
— 8.4 — µs
— 5.6 — µs
–50 V
±20 V
–0.2 A
–0.4 A
V
= –4 V*
GS
V
= –2.5 V*
GS
1
VDS = –10 V
= 300 Ω
L
1
1
2
200
g
150
Maximum Channel
Dissipation Curve
2SJ452
Maximum Safe Operation Area
–1
1 ms
–0.3
D
–0.1
PW = 10 ms
DC Operation
100
50
Channel Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10 V
–0.20
–6 V
–4 V
–0.16
D
–3 V
–0.12
–0.08
Drain Current I (A)
–0.04
0
–2 –4 –6 –8 –10
V = –2 V
Drain to Source Voltage V (V)
–2.5 V
GS
Pulse Test
DS
–0.03
–0.01
Operation in
this area is
limited by R
DS(on)
Drain Current I (A)
–0.003
–0.001
Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–0.20
V = –10 V
DS
–0.16
D
–0.12
–0.08
Drain Current I (A)
–0.04
Pulse Test
Tc = 75°C
0
–1 –2 –3 –4 –5
Gate to Source Volta
25°C
–25°C
e V (V)
DS
GS
3
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