HIT 2SJ410 Datasheet
2SJ410
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter and motor driver
ADE-208-539
1st. Edition
Outline
TO-220FM
G
D
S
1
2
3
1. Gate
2. Drain
3. Source
2SJ410
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
–200 V
±20 V
–6 A
–24 A
–6 A
30 W
2
Loading...