HIT 2SJ409-S, 2SJ409-L Datasheet
2SJ409(L), 2SJ409(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V Gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
3
2
1
4
3
2
1
4
D
G
S
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
2SJ409(L), 2SJ409(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–100 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
–20 A
Drain peak current I
D(pulse)
*
1
–80 A
Body to drain diode reverse drain current I
DR
–20 A
Channel dissipation Pch*
2
75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
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