HIT 2SJ399 Datasheet

2SJ399

Silicon P-Channel MOS FET

Application

Low frequency power switching

Features

• Low on-resistance

• Small package

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for low signal load switch.

ADE-208-267

1st. Edition

Outline

MPAK

G

3

1

2

D

1. Source

2. Gate

3. Drain

S

2SJ399

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

1

*

Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%

2. Marking is “ZF–”

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Input capacitance Ciss — 1.1 — pF VDS = –10 V
Output capacitance Coss — 22.3 — pF VGS = 0
Reverse transfer capacitance Crss — 0.17 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

–30 — — V ID = –100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±2µAVGS = ±16 V, VDS = 0
——–1µAVDS = –30 V, VGS = 0
–1.0 — –2.0 V ID = –10 µA, VDS = –5 V
— 2.7 5.0 Ω ID = –20 mA

— 2.0 3.0 Ω ID = –10 mA

— 530 — ns ID = –0.1 A
— 2170 — ns VGS = –10 V
— 7640 — ns RL = 100 Ω
— 7690 — ns PW = 5 µs

–30 V
±20 V
–0.2 A
–0.4 A
–0.2 A

V

= –4 V*

GS

V

= –10 V*

GS

1

1

2

2SJ399

Maximum Channel Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

–2.0

Pulse Test

–1.6

D

–1.2

–5 V

–4.5 V

Maximum Safe Operation Area

–1

1 ms

PW =

10 ms

D

–0.3

–0.1

DC Operation

–0.03

–0.01

Drain Current I (A)

–0.003

Operation in
this area is
limited by R

DS(on)

Ta = 25 °C

–0.001

–0.1 –0.3 –1 –3 –10 –30 –100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–0.5

V = –10 V

DS

–0.4

D

-0.3

DS

–0.8

Drain Current I (A)

–0.4

0

–2 –4 –6 –8 –10

Drain to Source Voltage V (V)

–4 V

–3.5 V

–3 V

–2.5 V

V = –2 V

GS

DS

-0.2

Drain Current I (A)

–0.1

75 °C

25 °C

Ta = –25 °C

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ399

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.5

–0.4

DS(on)

V (V)

–0.3

–0.2

–0.1

I = –0.05 A

D

Drain to Source Saturation Voltage

0

–4 –8 –12 –16 –20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

5

Ω

I = –0.2 A

4

DS(on)

R ( )

3

V = –4 V

GS

D

–0.1 A

–0.2 A

–0.1 A

GS

–0.05 A

I = –0.2 A

D

Static Drain to Source on State Resistance

vs. Drain Current

100

50

DS(on)

20

Ta = 25 °C
Pulse Test

Ω

R ( )

10

5

V = –4 V

GS

2

Drain to Source On State Resistance

1

–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1

Drain Current I (A)

–10 V

D

Forward Transfer Admittance vs.

Drain Current

1

fs

0.5
Ta = –25 °C

0.2

75 °C

0.1

25 °C

2

1

V = –10 V

GS

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

–0.1 A

–0.05 A

0.05

0.02

V = –10 V

DS

Pulse Test

Forward Transfer Admittance |y | (S)

0.01

–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1

Drain Current I (A)

D

Typical Capacitance vs.
Drain to Source Voltage

100

50
20

10

5
2

1

Capacitance C (pF)

0.5

0.2

0.1
–10 –20 –30 –40 –50

0

Drain to Source Voltage V (V)

Coss

Ciss

Crss

–0.5

–0.4

DR

–0.3

V = 0

GS

f = 1 MHz

DS

Reverse Drain Current vs.

Source to Drain Voltage

–10 V

10000

5000

2000

1000

500

t

d(off)

t

d(on)

t

f

t

r

Switching Time t (ns)

Switching Characteristics

V = –10 V

200

GS

PW = 5 µs

100

–0.1 –0.2 –0.5 –1 –2 –5

Drain Current I (A)

D

Pulse Test

V = 0

GS

2SJ399

–0.2

–5 V

–0.1

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

SD

5

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

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