HIT 2SJ399 Datasheet
2SJ399
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Small package
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for low signal load switch.
ADE-208-267
1st. Edition
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
2SJ399
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Marking is “ZF–”
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Input capacitance Ciss — 1.1 — pF VDS = –10 V
Output capacitance Coss — 22.3 — pF VGS = 0
Reverse transfer capacitance Crss — 0.17 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
–30 — — V ID = –100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±2µAVGS = ±16 V, VDS = 0
——–1µAVDS = –30 V, VGS = 0
–1.0 — –2.0 V ID = –10 µA, VDS = –5 V
— 2.7 5.0 Ω ID = –20 mA
— 2.0 3.0 Ω ID = –10 mA
— 530 — ns ID = –0.1 A
— 2170 — ns VGS = –10 V
— 7640 — ns RL = 100 Ω
— 7690 — ns PW = 5 µs
–30 V
±20 V
–0.2 A
–0.4 A
–0.2 A
V
= –4 V*
GS
V
= –10 V*
GS
1
1
2
2SJ399
Maximum Channel Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–2.0
Pulse Test
–1.6
D
–1.2
–5 V
–4.5 V
Maximum Safe Operation Area
–1
1 ms
PW =
10 ms
D
–0.3
–0.1
DC Operation
–0.03
–0.01
Drain Current I (A)
–0.003
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
–0.001
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
–0.5
V = –10 V
DS
–0.4
D
-0.3
DS
–0.8
Drain Current I (A)
–0.4
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
–4 V
–3.5 V
–3 V
–2.5 V
V = –2 V
GS
DS
-0.2
Drain Current I (A)
–0.1
75 °C
25 °C
Ta = –25 °C
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
Loading...