HIT 2SJ387-S, 2SJ387-L Datasheet
2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC - DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-2
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SJ387(L), 2SJ387(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–20 V
Gate to source voltage V
GSS
±10 V
Drain current I
D
–10 A
Drain peak current I
D(pulse)
*
1
–40 A
Body to drain diode reverse drain current I
DR
–10 A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2SJ387(L), 2SJ387(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20 — — V ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±10 — — V IG = ±200 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±6.5 V, VDS = 0
Zero gate voltage drain current I
DSS
— — –100 µAV
DS
= –16 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
–0.5 — –1.5 V ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
— 0.05 0.07 Ω ID = –5 A
V
GS
= –4 V*
1
— 0.07 0.1 Ω ID = –5 A
V
GS
= –2.5 V*
1
Forward transfer admittance |yfs| 7 12 — S ID = –5 A
V
DS
= –10 V*
1
Input capacitance Ciss — 1170 — pF VDS = –10 V
Output capacitance Coss — 860 — pF VGS = 0
Reverse transfer capacitance Crss — 310 — pF f = 1 MHz
Turn-on delay time t
d(on)
— 20 — ns ID = –5 A
Rise time t
r
— 325 — ns VGS = –4 V
Turn-off delay time t
d(off)
— 350 — ns RL = 2 Ω
Fall time t
f
— 425 — ns
Body to drain diode forward
voltage
V
DF
— –1.0 — V IF = –10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 240 — ns IF = –10 A, VGS = 0,
diF/dt = 20 A/µs
Note: 1. Pulse Test
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