HIT 2SJ386 Datasheet
2SJ386
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
2SJ386
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 1.0 1.7 — S ID = –1 A
Input capacitance Ciss — 177 — pF VDS = –10 V
Output capacitance Coss — 120 — pF VGS = 0
Reverse transfer capacitance Crss — 59 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
–30 — — V ID = –10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
— — –10 µAVDS = –24 V, VGS = 0
–1.0 — –2.5 V ID = –1 mA, VDS = –10 V
— 0.3 0.4 Ω ID = –2 A
— 0.55 0.8 Ω ID = –2 A
—8 —nsI
— 28 — ns VGS = –10 V
— 45 — ns RL = 15 Ω
—60—ns
–30 V
±20 V
–3 A
–5 A
–3 A
V
= –10 V*
GS
V
= –4 V*
GS
V
= –10 V*
DS
= –2 A
D
1
1
1
2
2SJ386
Maximum Channel Dissipation Curve
1.6
1.2
0.8
0.4
Channel Power Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–2.0
–1.6
D
–1.2
–0.8
–3.5 V
–5 V
–4 V
–3 V
Ta = 25 °C
Pulse Test
–2.5 V
–10
Maximum Safe Operation Area
100 µs
PW = 10 ms
–3
D
–1
–0.3
–0.1
Drain Current I (A)
Operation in
this area is
limited by R
DC Operation
DS(on)
1 ms
–0.03
Ta = 25 °C
–0.01
1 shot pulse
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
–5
V = –10 V
DS
Pulse Test
–4
D
–3
Ta = –25 °C
25 °C
–2
75 °C
Drain Current I (A)
–0.4
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
V = –2 V
GS
DS
Drain Current I (A)
–1
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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