2SJ386
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
2SJ386
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
DSS
GSS
D
D(pulse)
DR
1
*
Channel dissipation Pch 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 1.0 1.7 — S ID = –1 A
Input capacitance Ciss — 177 — pF VDS = –10 V
Output capacitance Coss — 120 — pF VGS = 0
Reverse transfer capacitance Crss — 59 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
–30 — — V ID = –10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
— — –10 µAVDS = –24 V, VGS = 0
–1.0 — –2.5 V ID = –1 mA, VDS = –10 V
— 0.3 0.4 Ω ID = –2 A
— 0.55 0.8 Ω ID = –2 A
—8 —nsI
— 28 — ns VGS = –10 V
— 45 — ns RL = 15 Ω
—60—ns
–30 V
±20 V
–3 A
–5 A
–3 A
V
= –10 V*
GS
V
= –4 V*
GS
V
= –10 V*
DS
= –2 A
D
1
1
1
2
2SJ386
Maximum Channel Dissipation Curve
1.6
1.2
0.8
0.4
Channel Power Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–2.0
–1.6
D
–1.2
–0.8
–3.5 V
–5 V
–4 V
–3 V
Ta = 25 °C
Pulse Test
–2.5 V
–10
Maximum Safe Operation Area
100 µs
PW = 10 ms
–3
D
–1
–0.3
–0.1
Drain Current I (A)
Operation in
this area is
limited by R
DC Operation
DS(on)
1 ms
–0.03
Ta = 25 °C
–0.01
1 shot pulse
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
–5
V = –10 V
DS
Pulse Test
–4
D
–3
Ta = –25 °C
25 °C
–2
75 °C
Drain Current I (A)
–0.4
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
V = –2 V
GS
DS
Drain Current I (A)
–1
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
2SJ386
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Ta = 25 °C
Pulse Test
–4
DS(on)
V (V)
–3
–2
I = –5 A
D
–1
Drain to Source Saturation Voltage
0
–4 –8 –12 –16 –20
Gate to Source Voltage V (V)
–3 A
–1 A
GS
Static Drain to Source on State Resistance
vs. Temperature
1.0
Ω
I = –3 A
D
0.8
DS(on)
R ( )
0.6
GS
–1 A
I = –5 A
D
V = –4 V
0.4
–1 A
0.2
V = –10 V
GS
–3 A
0
Static Drain to Source on State Resistance
–40 0 40 80 120 160
Ambient Temperature Ta (°C)
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25 °C
Ω
Pulse Test
5
DS(on)
2
R ( )
1
V = –4 V
0.5
GS
–10 V
0.2
Drain to Source On State Resistance
0.1
–0.1 –1 –10
–0.2 –0.5 –2 –5
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
10
fs
5
Ta = –25 °C
2
1
75 °C
0.5
0.2
Forward Transfer Admittance |y | (S)
0.1
–0.1 –1 –10
–0.2 –0.5 –2 –5
V = –10 V
Pulse Test
Drain Current I (A)
D
25 °C
DS
D
4
Typical Capacitance vs.
Drain to Source Voltage
1000
500
200
100
50
Capacitance C (pF)
20
10
–10 –20 –30 –40 –50
0
Drain to Source Voltage V (V)
Switching Characteristics
200
100
t
f
50
t
d(off)
20
10
Switching Time t (ns)
5
V = –10 V, V = –30 V
GS
2
–0.05
PW = 2 µs, duty < 1 %
–0.1 –0.2 –0.5 –1 –2 –5
Drain Current I (A)
Ciss
Coss
Crss
t
r
t
d(on)
V = 0
GS
f = 1 MHz
DS
DD
D
Dynamic Input Characteristics
0
V = –30 V
DD
–10
DS
–20 V
–10 V
I = –3 A
D
–20
V = –30 V
–30
–40
V
DS
DD
V
–20 V
–10 V
GS
Drain to Source Voltage V (V)
0
4 8 12 16 20
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
DR
–3
–2
–10 V
–5 V
V = 0
GS
–1
Reverse Drain Current I (A)
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V (V)
2SJ386
SD
0
–4
GS
–8
–12
–16
Gate to Source Voltage V (V)
–20–50
5
Unit: mm
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
0.7
8.0 ± 0.5
2.3 Max
10.1 Min
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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