HIT 2SJ363 Datasheet
2SJ363
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ363
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “PY”.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.35 0.45 Ω ID = –1 A, VGS = –10 V*
Forward transfer admittance |yfs| 1.4 2.0 — S ID = –1 A, VDS = –10 V*
Input capacitance Ciss — 2.1 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 100 — pF f = 1 MHz
Reverse transfer capacitance Crss — 0.25 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
–30 — — V ID = –10 mA, VGS = 0
±20——V I
——±5µAVGS = ±16 V, VDS = 0
——–1µAVDS = –24 V, VGS = 0
–1.0 — –2.0 V ID = –100 µA, VDS = –10 V
— 0.6 0.75 Ω ID = –1 A, VGS = –4 V*
— 1.65 — µsI
—8 —µsR
— 25.9 — µs
— 14.9 — µs
–30 V
±20 V
–2 A
–4 A
–2 A
1W
= ±10 µA, VDS = 0
G
= –1 A, VGS = –10 V,
D
= 30 Ω
L
1
1
1
2
2.0
1.5
Maximum Channel Power
Dissipation Curve
D
–10
–3
–1
Maximum Safe Operation Area
100 µs
1 ms
PW =
10 ms
DC Operation
2SJ363
1.0
0.5
(on the aluminam ceramic board)
Channel Power Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–4.5 V
–4 V
–2.0
–1.6
D
–3.5 V
–3 V
Pulse Test
–1.2
–2.5 V
–0.8
Drain Current I (A)
–0.4
–2 V
–0.3
–0.1
Operation in
Drain Current I (A)
–0.03
this area is
limited by R
DS(on)
Ta = 25 °C
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
–5
–4
Ta = –25 °C
D
–3
–2
Drain Current I (A)
–1
V = –10 V
DS
25 °C
75 °C
V = –1.5 V
GS
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
DS
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
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